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Short-circuit current density J sc for c-Si (indirect band-gap) and... | Download Scientific Diagram
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Schematic band diagram of a-Si:H(n)/c-Si(p) heterojunction including... | Download Scientific Diagram
![Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to ${\\left( {{E_g}} \\right)_C},{\\text{ }}{\\left( {{E_g}} \\right)_{Si}}{\\text ... Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to ${\\left( {{E_g}} \\right)_C},{\\text{ }}{\\left( {{E_g}} \\right)_{Si}}{\\text ...](https://www.vedantu.com/question-sets/17a5ca21-e66a-499e-8737-d5c13918e2f14835090380208633835.png)
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to ${\\left( {{E_g}} \\right)_C},{\\text{ }}{\\left( {{E_g}} \\right)_{Si}}{\\text ...
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Electronic structure and optical properties of CsI under high pressure: a first-principles study - RSC Advances (RSC Publishing) DOI:10.1039/C7RA08777B
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Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain | The Journal of Physical Chemistry C
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7: The different band gaps of c-Si, μc-Si:H, and a-Si:H cause different... | Download Scientific Diagram
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